Deposition of silicon dioxide films with an atmospheric-pressure plasma jet
- 1 August 1998
- journal article
- Published by IOP Publishing in Plasma Sources Science and Technology
- Vol. 7 (3) , 286-288
- https://doi.org/10.1088/0963-0252/7/3/006
Abstract
A plasma jet has been developed which deposits silica films at up to at 760 Torr and 115 to C. The jet operates by feeding oxygen and helium gas between two coaxial electrodes that are driven by a 13.56 MHz radio frequency source at 40 to 500 W. Tetraethoxysilane is mixed with the effluent of the plasma jet and directed onto a substrate located 1.7 cm downstream. The properties of the silica films, as determined by infrared spectroscopy and capacitance measurements, are comparable to those of thermally grown silicon dioxide films at C.Keywords
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