Examination of rapid thermal annealed GaAs using cathodoluminescence
- 26 June 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (26) , 2671-2673
- https://doi.org/10.1063/1.101031
Abstract
Samples of semi-insulating GaAs were annealed for 5–18 s at 650–950 °C using rapid thermal annealing. Cathodoluminescence was used to compare as-received and annealed samples to determine the effect of the heat treatment. Cathodoluminescence images of the surface of samples show a change in background intensity after heating. Images of cleaved cross sections indicate that the change is not uniform throughout the thickness of the sample.Keywords
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