Factors Contributing to Cmos Static Ram Upset
- 1 January 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 33 (6) , 1524-1529
- https://doi.org/10.1109/tns.1986.4334635
Abstract
Phenomena contributing to transient radiation induced static RAM (SRAM) cell upset in CMOS integrated circuits (ICs) include rail span collapse, dynamic FET threshold voltage shifts, photocurrents internal to the RAM cell, secondary photocurrents, and lateral variations in silicon surface potential. Of these phenomena, it is found that the major contributors are rail span collapse and internal cell photocurrents. A model is presented which combines global rail span collapse calculations with detailed analyses of local effects in the ram cell.Keywords
This publication has 5 references indexed in Scilit:
- Analysis of Transient Radiation Upset in a 2K SRAMIEEE Transactions on Nuclear Science, 1985
- Transient Radiation Upset Simulations of CMOS Memory CircuitsIEEE Transactions on Nuclear Science, 1984
- Transient Response Model for Epitaxial TransistorsIEEE Transactions on Nuclear Science, 1983
- Hole Transport in MOS OxidesIEEE Transactions on Nuclear Science, 1975
- The Transient Response of Transistors and Diodes to Ionizing RadiationIEEE Transactions on Nuclear Science, 1964