Intersubband absorption in Sb δ-doped Si/Si1−xGex quantum well structures grown on Si (110)
- 4 May 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (18) , 2264-2266
- https://doi.org/10.1063/1.107049
Abstract
Strong electron intersubband infrared absorption is observed for Sb δ‐doped Si/Si1−xGex multiple quantum well structures grown on (110) Si substrates. The intersubband absorption is shown to be allowed for both the optical field components perpendicular and parallel to the quantum wells due to the tilted ellipsoidal of constant energy surfaces. About 90% infrared absorption is measured by a Fourier transform infrared spectrometer using a waveguide structure with 10 internal reflections. For various samples used in experiments, absorption peaks ranging from 4.9 to 5.8 μm are observed. The peak energy is shown to be tunable by changing the Ge composition in the Si1−xGex barriers and the doping concentration in the Si quantum wells.Keywords
This publication has 10 references indexed in Scilit:
- Intersubband absorption in Sb δ-doped molecular beam epitaxy Si quantum well structuresJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Intersubband Absorption in the Conduction Band of Si/Si1−xGex Multiple Quantum WellsMRS Proceedings, 1991
- Intersubband absorption in Si1−xGex/Si multiple quantum wellsApplied Physics Letters, 1990
- Low-temperature Si molecular beam epitaxy: Solution to the doping problemApplied Physics Letters, 1990
- Strained layer
Si SiGe Superlattices and Microstructures, 1987 - New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- Subband resonance of electrons on Si(110)Physical Review B, 1984
- Sharp profiles with high and low doping levels in silicon grown by molecular beam epitaxyJournal of Applied Physics, 1981
- Inter-subband optical absorption in space-charge layers on semiconductor surfacesZeitschrift für Physik B Condensed Matter, 1977