Leaky wave room-temperature double heterostructure GaAs:GaAlAs diode laser
- 1 July 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (1) , 23-25
- https://doi.org/10.1063/1.88881
Abstract
Operation of a new cleaved facet room-temperature double heterostructure GaAs:GaAlAs laser utilizing leaky wave coupling through the substrate is reported. The coupling mechanism is analogous to that of prism coupling from a waveguide, but no external components are used. The laser produces a highly collimated output beam with approximately 2°×8° divergence. The peak pulsed beam power at 2 times threshold is 1.5 W from one end with approximately one-third of this power in the collimated beam. The total external differential quantum efficiency is on the order of 35%. These desirable characteristics are obtained at the expense of threshold current increases of approximately 30%.Keywords
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