High Field Transport in n‐InSb at 77 °K and the Solution of Boltzmann's Equation by Iteration
- 1 August 1973
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 58 (2) , 493-499
- https://doi.org/10.1002/pssb.2220580208
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- High‐Field Transport: Collision Integrals for Small Band Gap SemiconductorsPhysica Status Solidi (b), 1973
- Numerical solution of electron motion in solidsJournal of Physics C: Solid State Physics, 1972
- High field transport in semiconductors. The drifted maxwellian approach. II. Application to n‐InsbPhysica Status Solidi (b), 1972
- High field transport in semiconductors. The drifted Maxwellian approach. I. general theoryPhysica Status Solidi (b), 1972
- MEASUREMENT OF VELOCITY-FIELD CHARACTERISTICS OF ELECTRONS IN InSb AT HIGH FIELDSApplied Physics Letters, 1970
- NEGATIVE DIFFERENTIAL MOBILITY IN INDIUM ANTIMONIDEApplied Physics Letters, 1969
- GUNN EFFECT IN n-TYPE InSbApplied Physics Letters, 1969
- Electron-hole pair production and gunn effect in InSbSolid State Communications, 1969
- Calculation of distribution functions by exploiting the stability of the steady stateJournal of Physics and Chemistry of Solids, 1969
- Intervalley-Scattering Selection Rules in III-V SemiconductorsPhysical Review B, 1966