Characterization of lateral correlation length of interface roughness in MBE grown GaAs/AlAs quantum wells by mobility measurement
- 2 May 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 111 (1-4) , 348-352
- https://doi.org/10.1016/0022-0248(91)90999-l
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Education
This publication has 10 references indexed in Scilit:
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