Two-way silicon-neuron interface by electrical induction

Abstract
A nerve cell is placed onto a combined silicon microstructure of an insulated spot of doped silicon and an insulated-gate field-effect transistor. Voltage pulses are applied to the insulated spot. They elicit neural activity which in turn modulates the transistor. The bidirectional interface between the ionics of neurons and the electronics of silicon is based on electrical induction mediated by an electrochemically safe interface.