Planar, embedded InP/GaInAs p-i-n photodiode with very high-speed response characteristics
- 1 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (22) , 1522-1524
- https://doi.org/10.1063/1.97321
Abstract
A surface‐illuminated InP/GaInAs p‐i‐n photodiode with a planar, embedded structure has been fabricated. By minimizing the stray capacitance and by using semi‐insulating substrates, the capacitance has been reduced to 0.08 pF for a diode with a diameter of 20 μm. It has been demonstrated that this photodiode has a very high‐speed response of greater than 10 GHz. The present structure is suitable not only as a discrete p‐i‐n photodiode but also for optoelectronic integration.Keywords
This publication has 2 references indexed in Scilit:
- Optoelectronic integrated AlGaAs/GaAs p-i-n/field-effect transistor with an embedded, planar p-i-n photodiodeApplied Physics Letters, 1986
- Small area InGaAs/InP p-i-n photodiodes: fabrication, characteristics and performance of devices in 274 Mb/s and 45 Mb/s lightwave receivers at 1.31 μm wavelengthElectronics Letters, 1980