Optoelectronic integrated AlGaAs/GaAs p-i-n/field-effect transistor with an embedded, planar p-i-n photodiode
- 26 May 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (21) , 1461-1463
- https://doi.org/10.1063/1.96889
Abstract
A new planarization technique for fabricating an optoelectronic integrated circuit (OEIC) has been developed. A photodiode has been perfectly embedded in a semi‐insulating GaAs substrate with a high uniformity over the wafer. A monolithically integrated p‐i‐n photodiode/field‐effect transistor (FET) has been successfully fabricated by applying this technique. This result indicates that the present technique is promising for the application to fabricating not only p‐i‐n/FET but also larger scale OEIC receivers and transmitters.Keywords
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