Can normal-incidence absorption be realized with n-doped (001)-grown direct-gap quantum wells?

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Abstract
Recent experiments suggest that normal incidence (TE) absorption due to inter‐conduction subband transitions in quantum wells is just as strong as in‐plane absorption (TM). However, a theoretical estimate based on a simplified k⋅p model predicts otherwise. We present here explicit numerical calculations based on a more elaborate microscopic model to confirm that TE absorption of III‐V quantum wells is usually negligible. Hence, a new interpretation of the above‐mentioned experiments is necessary. On the other hand, HgTe quantum wells are predicted to have a TE absorption coefficient comparable to the TM absorption of GaAs quantum wells.