Radiation hardness of silicon detectors manufactured on epitaxial material and FZ bulk enriched with oxygen, carbon, tin and platinum
- 14 August 1999
- journal article
- Published by Elsevier in Nuclear Physics B - Proceedings Supplements
- Vol. 78 (1-3) , 645-649
- https://doi.org/10.1016/s0920-5632(99)00618-0
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
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- Defect evolution in irradiated silicon detector materialNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996
- Damage correlations in semiconductors exposed to gamma, electron and proton radiationsIEEE Transactions on Nuclear Science, 1993