Investigation of temperature acceleration of thin oxide time-to-breakdown
- 30 September 1999
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 48 (1-4) , 47-50
- https://doi.org/10.1016/s0167-9317(99)00335-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Non-Arrhenius temperature dependence of reliability in ultrathin silicon dioxide filmsApplied Physics Letters, 1999
- On a universal parameter of intrinsic oxide breakdown based on analysis of trap-generation characteristicsIEEE Transactions on Electron Devices, 1998
- New insights in the relation between electron trap generation and the statistical properties of oxide breakdownIEEE Transactions on Electron Devices, 1998
- Light emission during direct and Fowler-Nordheim tunneling in ultra thin MOS tunnel junctionsMicroelectronic Engineering, 1997
- Temperature acceleration of time-dependent dielectric breakdownIEEE Transactions on Electron Devices, 1989
- Substrate hole current and oxide breakdownApplied Physics Letters, 1986