Threshold instability in IGFET’s due to emission of leakage electrons from silicon substrate into silicon dioxide
- 1 August 1976
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (3) , 198-200
- https://doi.org/10.1063/1.88991
Abstract
Experimental evidence of a new type of threshold instability in IGFET’s due to the emission of leakage electrons from the silicon substrate into SiO2 is presented. Also presented is a model relating the emission current to the leakage current components of the device. This emission phenomenon could be a serious threshold instability problem at high operating temperatures where the leakage current level is high, especially in devices with a dual dielectric as the gate insulator where the electron trap concentration is very high.Keywords
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