Young's Modulus Of In Situ Phosphorus-doped Polysilicon

24 August 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

Vol. 2, 80-83
https://doi.org/10.1109/sensor.1995.721749

Abstract

In this paper we present results on the mechanical characterization of in situ phosphorus-doped polysilicon films fabricated using various deposition conditions. Young's modulus of the polysilicon films was extracted by measuring the mechanical response of linear lateral comb-drive resonators.

Keywords

MICROMECHANICAL DEVICES
SEMICONDUCTOR DEVICE MEASUREMENT
TEMPERATURE MEASUREMENT
ACTUATORS
MECHANICAL VARIABLES MEASUREMENT
TEMPERATURE DISTRIBUTION
SILICON
FABRICATION
PLASMA TEMPERATURE
TEMPERATURE DEPENDENCE

This publication has 3 references indexed in Scilit:

In Situ Phosphorus-doped Polysilicon For Integrated Mems
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
Mechanical properties of fine grained polysilicon-the repeatability issue
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2003
A passive, in situ micro strain gauge
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002