In Situ Phosphorus-doped Polysilicon For Integrated Mems
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1, 198-201
- https://doi.org/10.1109/sensor.1995.717138
Abstract
In this paper we present a detailed study of in situ phosphorus-doped polysilicon deposition for microstructure fabrication. The dependence of deposition rate, resistivity and residual stress of the polysilicon films on the phosphine to silane mole ratio (PH/sub 3/ / SiH/sub 4/) and the deposition temperature are examined. Deposition at 590/spl deg/C and a PH/sub 3/ / SiH/sub 4/ mole ratio of 3.2x10/sup -3/ followed by rapid thermal annealing (RTA) at 900/spl deg/C for 60 s results in films with a deposition rate of 42 /spl Aring//min, a resistivity of 0.8 m/spl Omega/cm and a tensile residual stress of 36 MPa. In addition, films deposited at 585/spl deg/C and a PH/sub 3// SiH/sub 4/ mole ratio of 3.2x10/sup -3/ followed by RTA at 900/spl deg/C have a very small strain gradient and therefore exhibit little microstructure warpage. A 2 /spl mu/m thick, 1000 /spl mu/m long polysilicon cantilever beam shows an end deflection of less than 0.2 /spl mu/m.Keywords
This publication has 8 references indexed in Scilit:
- Young's Modulus Of In Situ Phosphorus-doped PolysiliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Process technology for the modular integration of CMOS and polysilicon microstructuresMicrosystem Technologies, 1994
- Properties of polysilicon films annealed by a rapid thermal annealing processThin Solid Films, 1992
- Stress and Microstructure in Phosphorus Doped Polycrystalline SiliconMRS Proceedings, 1992
- The application of fine-grained, tensile polysilicon to mechanicaly resonant transducersSensors and Actuators A: Physical, 1990
- Process Integration for active polysilicon resonant microstructuresSensors and Actuators, 1989
- Deposition and electrical properties of i n s i t u phosphorus-doped silicon films formed by low-pressure chemical vapor depositionJournal of Applied Physics, 1987
- Phosphorus‐Doped Polycrystalline Silicon via LPCVD: I . Process CharacterizationJournal of the Electrochemical Society, 1984