High-Temperature Mechanical Properties of GaAs Single Crystals: Effect of In “Doping” and of Environment
- 15 October 1986
- journal article
- Published by IOP Publishing in Europhysics Letters
- Vol. 2 (8) , 611-615
- https://doi.org/10.1209/0295-5075/2/8/007
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Study of an experimental technique for high-temperature deformation of compound semiconductors (liquid encapsulation)Physica Status Solidi (a), 1985
- Mechanism for dislocation density reduction in GaAs crystals by indium additionApplied Physics Letters, 1985
- The strength and plasticity of GaAs in saturated melts of solvent metals at the temperature of epitaxyPhysica Status Solidi (a), 1985
- Low-dislocation indium-alloyed GaAsJournal of Crystal Growth, 1984
- Low dislocation, semi-insulating In-doped GaAs crystalsJournal of Crystal Growth, 1984
- The theory and practice of dislocation reduction in GaAs and InPJournal of Crystal Growth, 1984
- Work hardening and recovery in sapphire (α-Al2O3) undergoing prism plane deformationActa Metallurgica, 1982
- Prismatic Slip of A12O3 Single Crystals Below 1000°C in Compression Under Hydrostatic PressureJournal of the American Ceramic Society, 1981
- Temperature and Orientation Dependence of Plastic Deformation in GaAs Single Crystals Doped with Si, Cr, or ZnJournal of the American Ceramic Society, 1975
- Deformation of single crystals of gallium arsenideJournal of Materials Science, 1973