3.21 ps ECL gate using InP/InGaAs DHBT technology
- 2 October 2003
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 39 (20) , 1434-1436
- https://doi.org/10.1049/el:20030940
Abstract
A new circuit configuration for an emitter-coupled logic (ECL) gate that can reduce propagation delay time has been demonstrated. Nineteen-stage ring oscillators were fabricated using InP/InGaAs double-heterojunction bipolar transistors (DHBTs) with cutoff frequency fT and maximum oscillation frequency fmax of about 232 and 360 GHz, respectively, to evaluate the speed performance of the proposed ECL gate. The minimum propagation delay is 3.21 ps/gate. The proposed ECL gate is about 8% faster than the conventional ECL gate.Keywords
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