Electron-beam-induced current investigations of cw laser-annealed silicon
- 15 July 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (2) , 154-156
- https://doi.org/10.1063/1.91805
Abstract
The electron‐beam‐induced current in As+‐implanted Si is investigated after cw laser annealing. These experiments show that the laser power ’’window’’ for successful laser annealing is quite small; low charge collection efficiency usually results. To date, the best annealing results were obtained for a highly overlapping laser scan (100‐μm beam with 6‐μm scan steps), at a laser power approximately 70 –75% of the power required for melting. At higher laser power, evidence for laser‐induced damage has been observed. This evidence suggests that the damage extends several microns below the implanted layer.Keywords
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