Inversion of wurtzite GaN(0001) by exposure to magnesium
- 9 August 1999
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (6) , 808-810
- https://doi.org/10.1063/1.124520
Abstract
Magnesium incorporation during the molecular-beam epitaxy growth of wurtzite GaN is found to invert the Ga-polar (0001) face to the N-polar face. The polarity is identified based on the two different sets of reconstructions seen on the film prior to and after about 1 monolayer Mg exposure. The inversion boundary is seen to lie on the (0001) plane from transmission electron microscopy images, and a structural model is presented for the inversion. On the Ga-polar face, Mg is also seen to stabilize growth in the N-rich regime.Keywords
This publication has 20 references indexed in Scilit:
- Surface sensitivity of impurity incorporation: Mg at GaN (0001) surfacesPhysical Review B, 1999
- GaN(0001) surface structures studied using scanning tunneling microscopy and first-principles total energy calculationsSurface Science, 1999
- Structural and optical properties of epitaxially overgrown third-order gratings for InGaN/GaN-based distributed feedback lasersApplied Physics Letters, 1998
- Clean and As-Covered Zinc-Blende GaN (001) Surfaces: Novel Surface Structures and Surfactant BehaviorPhysical Review Letters, 1998
- Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxyApplied Physics Letters, 1998
- Reconstructions of theSurfacePhysical Review Letters, 1997
- Theory ofand () surfacesPhysical Review B, 1996
- Hole Compensation Mechanism of P-Type GaN FilmsJapanese Journal of Applied Physics, 1992
- Thermal Annealing Effects on P-Type Mg-Doped GaN FilmsJapanese Journal of Applied Physics, 1992
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989