Chemical beam epitaxy of InP without precracking using tertiarybutylbis(dimethylamino)phosphine
- 1 February 1997
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 172 (1-2) , 1-4
- https://doi.org/10.1016/s0022-0248(96)00422-8
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Investigations on indium phosphide grown by chemical beam epitaxyJournal of Electronic Materials, 1995
- Pyrolysis of tertiarybutylphosphine at low pressureJournal of Electronic Materials, 1995
- Etching effect on metal-organic molecular-beam epitaxy growth of GaSb using triethylgallium and trisdimethylaminoantimonyApplied Physics Letters, 1994
- Chemical/surface mechanistic considerations in the design of novel precursors for metalorganic molecular beam epitaxyJournal of Crystal Growth, 1994
- Comparison of chemical beam epitaxy and metalorganic chemical vapour deposition for highly strained multiple quantum well InGaAsP/InP 1.5 μm lasersJournal of Crystal Growth, 1994
- Monolayer chemical beam etchingJournal of Crystal Growth, 1994
- Chemical beam epitaxial growth of InP, InGaP, and InAs heterojunctions using triethylindium and bisphosphinoethaneJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichlorideApplied Physics Letters, 1993
- Chemical beam epitaxy of GaInP on GaAs(100) substrates and its application to 0.98 μm lasersJournal of Crystal Growth, 1992
- Non-hydride group V sources for OMVPEJournal of Electronic Materials, 1988