Comparison of chemical beam epitaxy and metalorganic chemical vapour deposition for highly strained multiple quantum well InGaAsP/InP 1.5 μm lasers

This publication has 18 references indexed in Scilit:

• Strain-compensated InGaAs/GaAsP/GaInAsP/GaInP quantum well lasers (λ∼0.98 μm) grown by gas-source molecular beam epitaxy
  Applied Physics Letters, 1993
• Growth of strain-balanced InAsP/InGaP superlattices for 1.06 μm optical modulators
  Applied Physics Letters, 1993
• Low threshold current and high differential gain in ideal tensile- and compressive-strained quantum-well lasers
  Journal of Applied Physics, 1992
• The Use of Strain to Optimize Quantum Well Device Performance
  MRS Proceedings, 1992
• Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells
  IEEE Photonics Technology Letters, 1992
• Frequency response and differential gain in strained and unstrained InGaAs/InGaAsP quantum well lasers
  Electronics Letters, 1991
• High-performance 1.5 mu m wavelength InGaAs-InGaAsP strained quantum well lasers and amplifiers
  IEEE Journal of Quantum Electronics, 1991
• Strain-compensated strained-layer superlattices for 1.5 μm wavelength lasers
  Applied Physics Letters, 1991
• Evidence of gain enhancement in long wavelength strained quantum well laser diodes
  Electronics Letters, 1991
• Valence band engineering in strained-layer structures
  Semiconductor Science and Technology, 1989