Growth of strain-balanced InAsP/InGaP superlattices for 1.06 μm optical modulators

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Abstract
Using a strain‐balanced growth approach, we show that the pseudomorphic InAsP/InGaP multiple quantum well structures, grown by chemical beam epitaxy, have superior material properties for 1.06 μm modulator application when compared to the strained InAsP/InP or the lattice‐matched InGaAsP/InP systems. The broadening in absorption edge due to dislocations in the strained system, or composition fluctuations in the lattice‐matched system as a consequence of growth temperature instability, can be greatly minimized. A strong reduction in the nonradiative recombination centers in the strain‐balanced InAsP/InGaP system has been observed.