Noise performance of low power 0.25 micron gate ion implanted D-mode GaAs MESFET for wireless applications
- 1 July 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 15 (7) , 239-241
- https://doi.org/10.1109/55.294082
Abstract
We report on the noise performance of low power 0.25 /spl mu/m gate ion implanted D-mode GaAs MESFETs suitable for wireless personal communication applications. The 0.25 /spl mu/m/spl times/200 /spl mu/m D-mode MESFET has a f/sub t/ of 18 GHz and f/sub max/ of 33 GHz at a power level of 1 mW (power density of 5 mW/mm). The noise characteristics at 4 GHz for the D-mode MESFET are F/sub min/=0.65 dB and G/sub assoc/=13 dB at 1 mW. These results demonstrate that the GaAs D-mode MESFET is also an excellent choice for low power personal communication applications.Keywords
This publication has 7 references indexed in Scilit:
- Low current enhancement mode MMICs for portable communication applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Advanced technologies of low-power GaAs ICs and power modules for cellular telephonesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- An L-band ultra low power consumption monolithic low noise amplifier [for mobile communication]Published by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applicationsIEEE Microwave and Guided Wave Letters, 1993
- Ultra-low DC power consumptions in monolithic L-band componentsIEEE Transactions on Microwave Theory and Techniques, 1992
- Design and performance of low-current GaAs MMICs for L-band front-end applicationsIEEE Transactions on Microwave Theory and Techniques, 1991
- Noise characteristics of gallium arsenide field-effect transistorsIEEE Transactions on Electron Devices, 1974