Change in the type of majority carriers in disordered lnxSe100−x thin-film alloys
- 1 February 1996
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 31 (3) , 581-587
- https://doi.org/10.1007/bf00367872
Abstract
No abstract availableKeywords
This publication has 35 references indexed in Scilit:
- Electrical and switching properties of InSe amorphous thin filmsThin Solid Films, 1991
- Optical absorption and photoconductovity in amorphous indium selenide thin filmsThin Solid Films, 1987
- Photovoltaic effect in gold-indium selenide Schottky barriersJournal of Applied Physics, 1983
- Photoconductivity and photovoltaic effect in indium selenideJournal of Applied Physics, 1983
- Electrical and optical characteristics of a schottky barrier on a cleaved surface of the layered semiconductor InSePhysica Status Solidi (a), 1982
- Optical properties and photovoltaic device applications of InSe filmsThin Solid Films, 1981
- Growth of CuInSe2 by molecular beam epitaxyJournal of Applied Physics, 1980
- Photovoltaic Effect of Amorphous InxSe1-x Film–SnO2 StructureJapanese Journal of Applied Physics, 1980
- Defect chemistry of lone-pair semiconductorsPhilosophical Magazine Part B, 1978
- The crystal structure of tetraindium triselenideActa Crystallographica Section B: Structural Science, Crystal Engineering and Materials, 1973