Hot electrons in one dimension
- 15 September 1985
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 58 (6) , 2242-2251
- https://doi.org/10.1063/1.335941
Abstract
An exact solution is given in one dimension for the electron distribution as limited by optical phonon scattering. The solution is valid for an arbitrary shape of potential energy, and current flow. Numerical results are presented for both constant field devices, and for the nonconstant fields of a typical metal-oxide-semiconductor-field-effect transistor (MOSFET) channel in silicon.This publication has 23 references indexed in Scilit:
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