IR ellipsometry investigations of N2O-nitrided silicon oxide thin films on silicon
- 1 October 1993
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 234 (1-2) , 337-341
- https://doi.org/10.1016/0040-6090(93)90281-s
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Characterization of thin oxide-n itride double layers on silicon wafers by IR ellipsometryPhysica Status Solidi (a), 1992
- Examination of thin SiO2 films on Si using spectroscopic polarization modulation ellipsometryJournal of Applied Physics, 1991
- Infrared spectroscopic ellipsometry using a Fourier transform infrared spectrometer: Some applications in thin-film characterizationReview of Scientific Instruments, 1989