Characterization of thin oxide-n itride double layers on silicon wafers by IR ellipsometry
- 16 March 1992
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 130 (1) , 115-123
- https://doi.org/10.1002/pssa.2211300114
Abstract
No abstract availableKeywords
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- Spectroscopic ellipsometry in the infraredInfrared Physics, 1981
- Thermal Oxidation Rate of a Si3N4Film and Its Masking Effect against Oxidation of SiliconJapanese Journal of Applied Physics, 1978