The interfacial reaction between ITO and silicon nitride deposited by PECVD in fringe field switching device
- 1 June 2002
- journal article
- Published by Elsevier in Current Applied Physics
- Vol. 2 (3) , 229-232
- https://doi.org/10.1016/s1567-1739(02)00092-5
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Electro-optic characteristics and switching principle of a nematic liquid crystal cell controlled by fringe-field switchingApplied Physics Letters, 1998
- Optical and compositional properties of a-Si:H/transparent conductive oxide interfacesJournal of Vacuum Science & Technology A, 1989
- Effect of hydrogen plasma treatment on transparent conducting oxidesApplied Physics Letters, 1986