Non-mass-analyzed ion implantation from a solid phosphorus source

1 June 1982

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 40 (11) , 976-978
https://doi.org/10.1063/1.92973

Abstract

A phosphorus ion beam, extracted from a Freeman ion source charged with elemental phosphorus, has been investigated for use in solar cell fabrication. Mass spectroscopy of the beam indicates the absence of both minority-carrier lifetime degrading impurities and hydrogen. The ion beam, without mass analysis, was used for ion implantation of solar cells, and performance for all cells was found to be equivalent to mass-analyzed controls.

Keywords

This publication has 4 references indexed in Scilit:

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Impurities in silicon solar cells
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