Carrier dynamics in staggered-band lineup n-InAlAs/n-InP heterostructures

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Abstract
The temperature and time dependence of the spatially indirect recombination of two‐dimensional (2D) electrons and holes localized at adjacent sides of an isotype n‐InAlAs/n‐InP heterojunction having a staggered band lineup is investigated. With increasing temperature, a much weaker drop of the photoluminescence intensity than in quantum wells and 3D layers is observed. Still more surprising is the observed decrease of the decay time with increasing temperature from 3.8 ns at 6 K to 1.2 ns at 300 K. Both observations are consistently explained by an increasing occupation of higher subband levels of the interface potential well and an activation of new radiative and nonradiative recombination channels including Δn≠0 ones with increasing temperature.