High mobility AlInAs/InP high electron mobility transistor structures grown by organometallic vapor phase epitaxy
- 16 September 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (12) , 1485-1487
- https://doi.org/10.1063/1.105295
Abstract
We have grown single and double-channel AlInAs/InP modulation doped heterostructures with electron mobilities as high as 5000 and 27 000 cm2/V s at 300 and 77 K, respectively. The sheet electron concentrations for these structures range from 1.5×1012 to 5×1012 cm−2. The layers exhibit strong Shubnikov de Haas oscillations, from which we determined two-dimensional electron gas mobilities at 1.8 K of 40 000 cm2/V s. The electrical properties of the AlInAs/InP heterostructures are the best reported for any device structures with InP as the active layer material.Keywords
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