Modulation-doped AlInAs/InP heterostructures grown by organometallic vapor phase epitaxy
- 30 July 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (5) , 492-493
- https://doi.org/10.1063/1.103630
Abstract
We have grown modulation-doped AlInAs/InP heterostructures with two-dimensional electron gases. Hall measurements and Shubnikov-de Haas oscillations observed in these heterostructures yield electron mobilities as high as 26000, 9000, 2300 cm2/V s at 2, 77, and 300 K, with electron concentrations as high as 1.5×1012 cm−2. These results demonstrate the potential of the AlInAs/InP heterostructure for power microwave applications.Keywords
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