Free-carrier density determination in p-type GaAs using Raman scattering from coupled plasmon-phonon modes
- 1 June 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (11) , 5598-5600
- https://doi.org/10.1063/1.340339
Abstract
A nondestructive optical means of determining the activated hole concentration in p-type polar semiconductors is described. The Raman spectra from coupled plasmon-longitudinal-optical-phonon modes in five samples of Be-doped GaAs are measured and fitted using a theory which takes into account the degenerate light- and heavy-hole valence bands. The results indicate that coupled plasmon-longitudinal-optical-phonon modes in p-type material differ both quantitatively and qualitatively from those in n-type semiconductors.This publication has 10 references indexed in Scilit:
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