Photocurrent spectroscopy of InxGa1−xAs/GaAs multiple quantum wells
- 29 May 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (22) , 2230-2232
- https://doi.org/10.1063/1.101132
Abstract
Photocurrent spectra of InxGa1−xAs/GaAs multiple quantum well structures grown by molecular beam epitaxy are studied in the presence of electric fields perpendicular to the heterointerface. Several Δn=0 allowed and Δn≠0 forbidden excitonic transitions are observed. Both negative and positive shifts of exciton transitions are found. Good agreement is found between the photocurrent observations and calculations using a multiband effective‐mass approach, taking into account the strain‐induced splitting.Keywords
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