Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE
- 1 October 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (10A) , L1744-1746
- https://doi.org/10.1143/jjap.29.l1744
Abstract
Low defect nanometer structures of 70 nm ∼25 nm width are formed in GaInAs/GaInAsP/InP multi-quantum-well layers with low ion extraction voltage (20 V) and at low-pressure (LP) of etching gas (5×10-6 Torr) using electron cyclotron resonance reactive ion beam etching (ECR-RIBE) system for the first time. The room temperature photoluminescence peak intensity after etching and slight cleaning, taking into account the remaining volume of the GaInAs/GaInAsP layer, was almost 60% of that before etching, which proved the very low-damage nature of the present etching method. Moreover we also report for the first time the fabrication of multi-layered GaInAs/InP quantum wire (3 periods) structure using LP-ECR-RIBE.Keywords
This publication has 7 references indexed in Scilit:
- Buried rectangular GaInAs/InP corrugations of 70 nm pitch fabricated by OMVPEElectronics Letters, 1990
- Time-resolved investigations of sidewall recombination in dry-etched GaAs wiresApplied Physics Letters, 1990
- Wet Chemical Etching for Ultrafine Periodic Structure: Rectangular InP Corrugations of 70 nm Pitch and 100 nm DepthJapanese Journal of Applied Physics, 1989
- Impact of sidewall recombination on the quantum efficiency of dry etched InGaAs/InP semiconductor wiresApplied Physics Letters, 1989
- Fabrication technique for GaInAsP/InP quantum wire structure by LP-MOVPEJournal of Crystal Growth, 1988
- Gain and the threshold of three-dimensional quantum-box lasersIEEE Journal of Quantum Electronics, 1986
- GaAs and GaAlAs Equi-Rate Etching Using a New Reactive Ion Beam Etching SystemJapanese Journal of Applied Physics, 1983