Time-resolved investigations of sidewall recombination in dry-etched GaAs wires
- 14 May 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (20) , 2016-2018
- https://doi.org/10.1063/1.103003
Abstract
We have investigated the sidewall recombination in dry‐etched GaAs/GaAlAs wires with widths between 12 μm and 300 nm using picosecond spectroscopy. The wires were fabricated with electron beam lithography and different reactive ion etching processes. The excitonic lifetimes decrease strongly with decreasing wire widths due to sidewall recombination. Using a model calculation to fit the experimentally observed width dependence of the lifetimes the surface recombination velocity is determined to be S=2×106 cm/s at 50 K. S increases with temperature and is independent of the etching process.Keywords
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