Application of AlGaAs/GaAs HBTs for wideband direct-coupled amplifiers
- 12 February 1987
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 23 (4) , 156-157
- https://doi.org/10.1049/el:19870110
Abstract
An AlGaAs/GaAs HBT direct-coupled amplifier has been designed and its characteristics described for the first time. The amplifier consists of two HBTs and three resistors without level-shift diodes. A superior amplifier performance of 11 dB gain with a 4 GHz bandwidth was obtained.Keywords
This publication has 1 reference indexed in Scilit:
- Application of Heterojunction Bipolar Transistors to High Speed, Small-Scale Digital Integrated CircuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1984