Midinfrared intersubband absorption in lattice-matched AlInN∕GaN multiple quantum wells
- 9 September 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (11)
- https://doi.org/10.1063/1.2045559
Abstract
We report the observation of midinfrared intersubband (ISB) absorption in nearly lattice-matched AlInNGaN multiple-quantum-wells. A clear absorption peak is observed around 3 μm involving transitions from the conduction band ground state to the first excited state. In addition to ISB absorption, photoluminescence experiments were carried out on lattice- matched AlInNGaN single quantum wells in order to determine the spontaneous polarization discontinuity between GaN and Al0.82 In0.18 N compounds. The experimental value is in good agreement with theoretical predictions. Our results demonstrate that the AlInNGaN system is very promising to achieve crack-free and low dislocation density structures dedicated to intersubband devices in the 2-4 μm wavelength rangeKeywords
This publication has 17 references indexed in Scilit:
- Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasersElectronics Letters, 2005
- Crack-free fully epitaxial nitride microcavity using highly reflective AlInN∕GaN Bragg mirrorsApplied Physics Letters, 2005
- Effective mass of InN epilayersApplied Physics Letters, 2004
- InAlN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam EpitaxyJapanese Journal of Applied Physics, 2004
- Intersubband transition in (GaN)m/(AlN)n superlattices in the wavelength range from 1.08 to 1.61 μmApplied Physics Letters, 2002
- Comparative study of ultrafast intersubband electron scattering times at ∼1.55 μm wavelength in GaN/AlGaN heterostructuresApplied Physics Letters, 2002
- Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structuresJournal of Physics: Condensed Matter, 2002
- Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriersApplied Physics Letters, 2000
- Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wellsApplied Physics Letters, 2000
- k⋅p method for strained wurtzite semiconductorsPhysical Review B, 1996