Trapping time in processed polycrystalline silicon measured by picosecond time-resolved reflectivity
- 1 April 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 63 (7) , 2316-2321
- https://doi.org/10.1063/1.341047
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- The temperature dependence of the refractive index of silicon at elevated temperatures at several laser wavelengthsJournal of Applied Physics, 1986
- Recombination mechanisms in Si and Si thin films determined by picosecond reflectivity measurements near Brewster’s angleApplied Physics Letters, 1986
- Picosecond optoelectronic measurement of the high-frequency scattering parameters of a GaAs FETIEEE Journal of Quantum Electronics, 1986
- A three-dimensional folded dynamic RAM in beam-recrystallized polysiliconIEEE Electron Device Letters, 1984
- Optical absorption coefficient of silicon at 1.152 μ at elevated temperaturesApplied Physics Letters, 1982
- Calculation of carrier and lattice temperatures induced in Si by picosecond laser pulsesApplied Physics Letters, 1982
- Determination of the temperature dependence of the free carrier and interband absorption in silicon at 1.06μmJournal of Physics C: Solid State Physics, 1979
- Transport properties of polycrystalline silicon filmsJournal of Applied Physics, 1978
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978
- The electrical properties of polycrystalline silicon filmsJournal of Applied Physics, 1975