Deformation potential constants of gallium impurity in germanium
- 1 December 1983
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 99 (8) , 391-395
- https://doi.org/10.1016/0375-9601(83)90301-8
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Spectroscopy of the solid-state analogues of the hydrogen atom: donors and acceptors in semiconductorsReports on Progress in Physics, 1981
- Stress Enhancement of the G Line of Singly Ionized Zinc in GermaniumAustralian Journal of Physics, 1980
- Quantitative Piezospectroscopy of the Ground and Excited States of Acceptors in SiliconPhysical Review B, 1973
- Spectroscopic Study of the Symmetries and Deformation-Potential Constants of Singly Ionized Zinc in Germanium. TheoryPhysical Review B, 1972
- Spectroscopic Study of the Deformation-Potential Constants of Group-III Acceptors in GermaniumPhysical Review B, 1970
- Excitation spectra of group III impurities in germaniumJournal of Physics and Chemistry of Solids, 1965
- Wave functions and energies of shallow acceptor states in germaniumJournal of Physics and Chemistry of Solids, 1964
- Spin and combined resonance on acceptor centres in Ge and Si type crystals—IJournal of Physics and Chemistry of Solids, 1963
- Theory of shallow acceptor states in Si and GeJournal of Physics and Chemistry of Solids, 1962
- Quantum Theory of Cyclotron Resonance in Semiconductors: General TheoryPhysical Review B, 1956