Charge trapping and intermodulation in HEMTs
- 8 November 2004
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 2, 799-802
- https://doi.org/10.1109/mwsym.2004.1339084
Abstract
Charge trapping effects in High Electron Mobil- ity Transistors (HEMTs) are linked to anomalous intermod- ulation behavior, known as memory effects. This behavior can be observed clearly as changes in intermodulation levels with tone-spacing, and two-tone asymmetry. A Volterra-series analysis of an HEMT with trapping predicts the distortion accurately, and allows an understanding of the mechanisms involved. Index Terms— FET amplifiers, intermodulation distortion, linearization, memory effects.Keywords
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