Homoepitaxial growth of CoSi2 and NiSi2 on (100) and (110) surfaces at room temperature
- 6 November 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (19) , 2005-2007
- https://doi.org/10.1063/1.102338
Abstract
Homoepitaxial growth of NiSi2 and CoSi2 on (100) and (110) surfaces is demonstrated at room temperature. Codeposition of stoichiometric silicide, by molecular beam epitaxy, onto thin, preannealed silicide layers on Si (100) and (110) leads to single‐crystal growth. High quality NiSi2 and CoSi2 films with ion channeling χmin2 and CoSi2 are related to the nucleation and mass transport processes. It is concluded that the reaction of disilicide takes place at room temperature.Keywords
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