Degradation of TiSi2/n+-Polysilicon Interfaces Due to High Temperature Processing
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- High Temperature Process Limitation on TiSi2Journal of the Electrochemical Society, 1986
- Lateral HVIC with 1200-V bipolar and field-effect devicesIEEE Transactions on Electron Devices, 1986
- Refractory metal silicon device technologySolid-State Electronics, 1968