Elimination of heterojunction band discontinuities by modulation doping

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Abstract
Conduction‐ or valence‐band discontinuities occurring at the junction of two heterogeneous semiconductors can be eliminated by appropriate doping of the interfacial region. We show by analytic and self‐consistent calculations that simultaneous modulation doping and parabolic compositional grading result in flat band‐edge potentials. The new concept is applied to distributed Bragg reflectors for vertical cavity lasers. The structures grown by molecular‐beam epitaxy exhibit significantly lower resistances as compared to step‐graded distributed Bragg reflectors.