Temperature dependence of silicon doping of GaAs by SiH4 and Si2H6 in atmospheric pressure metalorganic chemical vapour deposition
- 1 November 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (3) , 249-254
- https://doi.org/10.1016/0022-0248(89)90139-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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