High Power Density Converter using SiC-SBD
- 1 April 2007
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
This paper reports on the possibility of a high output power density converter by demonstrating a small volume DC-DC down converter using a 600 V superjunction MOSFET (SJ-MOSFET) and silicon carbide Schottky barrier diode (SiC-SBD). The output power density of the demonstrated DC-DC down converter was 50 W/cc, which is the future target of high power density converters.Keywords
This publication has 4 references indexed in Scilit:
- 10 MHz PWM converters with GaAs VFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A new generation of high voltage MOSFETs breaks the limit line of siliconPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- MDmesh/sup TM/: innovative technology for high voltage Power MOSFETsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Benchmark of power packaging for DC/DC and AC/DC convertersIEEE Transactions on Power Electronics, 2002