Influence of Al2O3 Deposition Temperature on Charge-Storage and Retention in MA(O)S Structures
- 1 November 1972
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 11 (11) , 1599-1604
- https://doi.org/10.1143/jjap.11.1599
Abstract
The influence of the deposition temperature of Al2O3 on the characteristics of MAS (metal-Al2O3-Si) and MAOS (Metal-Al2-SiO2-Si) memory devices is investigated. It is found that the films deposited below 700°C exhibit high conductivity lowering the high frequency capacitance of MAS and MAOS structures below their quasi-equilibrium minimum values in the C-V characteristics when the depleting bias voltage is applied beyond a certain value. In the case of MAOS structures the direction of the flat-band voltage shifts under positive bias changes from positive to negative with increasing SiO2 thickness. No distinguishable change in the charge storage characteristics is observed among the films deposited at 800, 900 and 950°C. Also it is observed that the faster the charge retention, the lower the deposition temperature for both MAS and MAOS structures.Keywords
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