Blue-band emission in LiInS2 crystals
- 1 March 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (3) , 1827-1828
- https://doi.org/10.1063/1.327736
Abstract
A new material, LiInS2 (β‐NaFeO2 type: wurtzitelike structure), for blue‐light emission is proposed. A deep blue‐band emission is observed by photoluminescence measurements at 77 K. The peak value is 453 nm for colorless as‐grown crystals. From the annealing studies in a sulfur atmosphere, sulfur vacancies are responsible for the blue‐band emission.This publication has 9 references indexed in Scilit:
- Single crystal growth of LiInS2Journal of Crystal Growth, 1979
- Photoluminescence in ZnSe grown by liquid-phase epitaxy from Zn-Ga solutionJournal of Applied Physics, 1979
- Blue electroluminescence from ZnSe diodesJournal of Applied Physics, 1977
- Photoluminescence of ion-implanted GaNJournal of Applied Physics, 1976
- Liquid-phase epitaxial growth of 6H-SiC by the dipping technique for preparation of blue-light-emitting diodesJournal of Applied Physics, 1976
- Sharp-line and broad-band emission in AgGaS2 crystalsJournal of Applied Physics, 1974
- Pyroelectric and electrooptic effects in LiInS2 and LiInSe2Materials Research Bulletin, 1973
- Linear and nonlinear optical properties of LiInS2Journal of Applied Physics, 1973
- Nature of Luminescence Transitions in ZnS CrvstalsJournal of the Physics Society Japan, 1964