An n-channel BICFET in the GaAs/AlGaAs material system
- 1 February 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (2) , 88-90
- https://doi.org/10.1109/55.32438
Abstract
An n-channel BICFET (bipolar inversion channel FET) and an HFET (heterojunction FET) have been fabricated for the first time by MBE (molecular-beam epitaxy) growth with the charge sheet located on the wide-bandgap side of the heterointerface. This implementation is most desirable because of the potential for low resistance, high gain, and a temperature-stable structure. The HFET associated with the BICFET has a positive threshold, indicating that no channel exists in the equilibrium state.Keywords
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